? 2003 ixys all rights reserved features ? international standard packages minibloc, with aluminium nitride isolation low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.25 0.28 ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 34 a i dm t c = 25 c, pulse width limited by t jm 136 a i ar t c = 25 c34a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr ds98763c(08/03) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source ixfn 34n100 v dss = 1000v i d25 = 34a r ds(on) = 0.28 ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfn 34n100 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 ? i d25 , pulse test 18 40 s c iss 9200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 300 pf t d(on) 41 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 ns t d(off) r g = 1 ? (external), 110 n s t f 30 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 185 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 34 a i sm repetitive; 136 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 vt j =25 c 180 ns t j =125 c 330 ns q rm t j =25 c2 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2003 ixys all rights reserved ixfn 34n100 v gs - volts 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 i d - amperes 0 10 20 30 40 50 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 8 16 24 32 40 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.3 1.6 1.9 2.2 i d =17a i d - amperes 0 1020304050 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts 0 5 10 15 20 25 i d - amperes 0 10 20 30 40 50 v ds - volts 048121620 i d - amperes 0 20 40 60 80 v gs = 10v v gs =10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 5v 5v 6v t j = 25 o c i d = 34a t j = 25 o c t j = 125 o c v gs =10v 9v 8v 7v 6v t j = 125 o c 6v figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfn 34n100 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 20 40 60 80 100 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 100 200 300 400 500 600 v gs - volts 0 2 4 6 8 10 12 crss coss v ds = 500 v i d = 17 a i g = 10 ma f = 100khz t j = 125 o c t j = 25 o c ciss 30000 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance
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